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Switch device for high power and radioactive environments
Scientists at the Institute of Microelectronics of Barcelona (IMB-CNM) have developed a novel JFET (Junction Field-Effect Transistor) which is very suitable for high-power devices and radioactive environments, where conventional JFET fail. Due to its particular configuration, the device presents very high radiation hardness.
Éxito de público en una jornada sobre mujer y ciencia
Organizada por el Instituto de Microelectrónica de Barcelona (IMB-CNM) del CSIC, sirvió para proyectar por primera vez en Cataluña el documental 'El enigma Agustina'.
Low cost and reusable wearable sensors
Scientists at the IMB-CNM have developed new portable and non-invasive sensors for monitoring biomarkers such as glucose, lactate or alcohol. They are based on wireless electro chromic and electrochemical sensors, and they can be used to detect metabolites in biological fluids, either human fluids (sweat, urine…) or in fluids derived from food products (e.g., leaking).
IMB-CNM collaborates with VLC Photonics
The company has developed silicon photonics chips with biomedical and telecommunications applications with the CSIC center.