IMB-CNM Talks: Development of LGAD sensors at IMB-CNM for High-Energy Physics Experiments and Synchrotron Applications
By Albert Doblas (predoctoral researcher at the Power Devices and Systems Group, IMB-CNM).
Introduction by researcher Salvador Hidalgo (PDS group, IMB-CNM).
#IMBCNMTalks #predoc #PhD
Abstract
Low Gain Avalanche Detector (LGAD) technology has been successfully developed during the recent years in order to use it mainly for high-energy physics (HEP) experiments. Based on the avalanche photo-diode (APD), LGADs have a moderately doped p-type layer, which is called multiplication layer, diffused underneath the n+ electrode. This allows the sensor to have an intrinsic gain, which amplifies the signal collected maintaining a low signal to noise ratio (S/N). The less doped multiplication layer leads to a linear gain in the whole operating regime of the sensor.
At IMB-CNM we have developed LGAD sensors, for tracking and timing applications, for the ATLAS and CMS experiments at CERN. Also, inverse LGADs have been developed for synchrotron applications as well as HEP experiments. This iLGAD sensor concept is one of the most promising technologies for enabling the future 4D tracking paradigm that requires both precise position and timing resolution.
Finally, we are developing a new production of LGADs to be used for low-energy particles detection.
About Albert Doblas
Albert Doblas was born in 1993 (Olesa de Montserrat). He received his B.S. degree in physics in 2016 from the Autonomous University of Barcelona and a M.S. degree in nanoscience and nanotechnology from the University of Barcelona (UB). In 2017, he joined the Power Devices and Systems Group, IMB-CNM. His research is mainly focused on the simulation, fabrication and characterization of silicon detectors for high-energy physics and synchrotron experiments.